RQJ0306FQDQS Overview
RQJ0306FQDQS Silicon P Channel MOS FET Power Switching.
RQJ0306FQDQS Key Features
- Low gate drive VDSS : -30 V and 2.5 V gate drive
- Low drive current
- High speed switching
- Small traditional power package (UPAK)
RQJ0306FQDQS Datasheet Details
| Part number | RQJ0306FQDQS |
|---|---|
| Datasheet | RQJ0306FQDQS-Renesas.pdf |
| File Size | 106.52 KB |
| Manufacturer | Renesas |
| Description | Silicon P-Channel MOS FET |
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