RQJ0306FQDQA Overview
RQJ0306FQDQA Silicon P Channel MOS FET Power Switching.
RQJ0306FQDQA Key Features
- Low gate drive VDSS : -30 V and 2.5 V gate drive
- Low drive current
- High speed switching
- Small traditional package (MPAK)
RQJ0306FQDQA Datasheet Details
| Part number | RQJ0306FQDQA |
|---|---|
| Datasheet | RQJ0306FQDQA-Renesas.pdf |
| File Size | 132.04 KB |
| Manufacturer | Renesas |
| Description | Silicon P-Channel MOS FET |
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