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BB506M - Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Renesas Technology

The BB506M by Renesas Technology is a Built in Biasing Circuit MOS FET IC UHF RF Amplifier. Below is the official datasheet preview.

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BB506M Built in Biasing Circuit MOS FET IC UHF RF Amplifier by Renesas Technology - Datasheet Preview — Official preview page of the BB506M Built in Biasing Circuit MOS FET IC UHF RF Amplifier datasheet (Renesas Technology).

Datasheet Details

Part number	BB506M
Manufacturer	Renesas Technology
File Size	165.18 KB
Description	Built in Biasing Circuit MOS FET IC UHF RF Amplifier
Datasheet	BB506M_RenesasTechnology.pdf
Additional preview pages of the BB506M datasheet.

BB506M Product details

Features

Built in Biasing Circuit; To reduce using parts cost & PC board space.
High gain www. DataSheet4U. com PG = 24 dB typ. (f = 900 MHz).
Low noise NF = 1.4 dB typ. (f = 900 MHz).
Low output capacitance Coss = 1.1 pF typ. (f = 1 MHz).
Provide mini mold packages: CMPAK-4 (SOT-343mod) Outline.

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Published: Nov 19, 2008 |