BB506M Datasheet - Renesas Technology

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

* Built in Biasing Circuit; To reduce using parts cost & PC board space.

* High gain www.DataSheet4U.com PG = 24 dB typ. (f = 900 MHz)

* Low noise NF = 1.4 dB typ. (f = 900 MHz)

* Low output capacitance Coss = 1.1 pF typ. (f = 1 MHz)

* Provide mini mold packag

BB506M

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Built in biasing circuit mos fet ic uhf rf amplifier.

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