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HAT2201WP
Silicon N Channel Power MOS FET Power Switching
Features
Capable of 8 V gate drive Low drive current High density mounting Low on-resistance
RDS(on) = 34 m typ. (at VGS = 10 V)
Outline
Preliminary Datasheet
REJ03G1679-0310 Rev.3.10
May 21, 2010
RENESAS Package code: PWSN0008DA-A (Package name: WPAK)
5 678
5 678 D DDD
4
4 32 1
G
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
S SS 1 23
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25°C, Rg 50 3.
HAT2201WP Datasheet
