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HAT2201WP Silicon N-Channel Power MOSFET

HAT2201WP Description

HAT2201WP Silicon N Channel Power MOS FET Power Switching .

HAT2201WP Features

* Capable of 8 V gate drive
* Low drive current
* High density mounting
* Low on-resistance RDS(on) = 34 m typ. (at VGS = 10 V) Outline Preliminary Datasheet REJ03G1679-0310 Rev.3.10 May 21, 2010 RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 678 5 678 D DDD 4 4 32 1

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Silicon N-Channel Power MOSFET Renesas Technology
Renesas Technology HAT2201WP-like datasheet