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Rohm Semiconductor Electronic Components Datasheet

2SD1760 Datasheet

Power Transistor

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Power Transistor (50V, 3A)
2SD1760 / 2SD1864
Features
1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.)
(IC/IB = 2A / 0.2A)
2) Complements the 2SB1184 / 2SB1243.
Structure
Epitaxial planar type
NPN silicon transistor
Dimensions (Unit : mm)
2SD1760
6.5±0.2
5.1
+0.2
0.1
C0.5
2.3
+0.2
0.1
0.5±0.1
2SD1864
6.8±0.2
2.5±0.2
0.75
0.9
0.65±0.1
2.3±0.2 2.3±0.2
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
0.55±0.1
1.0±0.2
(1) Base
(2) Collector
(3) Emitter
0.65Max.
0.5±0.1
(1) (2) (3)
2.54 2.54
1.05
0.45±0.1
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
Collector power 2SD1760
dissipation
2SD1864
IC
PC
3 A (DC)
4.5 A (Pulse) 1
15 W (Tc=25°C)2
1W
Junction temperature
Tj 150 °C
Storage temperature
Tstg 55 to +150 °C
1 Single pulse, PW=100ms
2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
Electrical characteristics (Ta=25C)
Parameter
Symbol
Collector-base breakdown voltage
BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage
VCE (sat)
DC current transfer ratio
hFE
Transition frequency
fT
Output capacitance
Cob
Measured using pulse current.
Min.
60
50
5
120
Typ.
0.5
90
40
Max.
1
1
1
390
Unit
V
V
V
μA
μA
V
MHz
pF
Conditions
IC=50μA
IC=1mA
IE=50μA
VCB=40V
VEB=4V
IC/IB=2A/0.2A
VCE=3V, IC=0.5A
VCE=5V, IE=−500mA, f=30MHz
VCB=10V, IE=0A, f=1MHz
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/3
2009.12 - Rev.A


Rohm Semiconductor Electronic Components Datasheet

2SD1760 Datasheet

Power Transistor

No Preview Available !

2SD1760 / 2SD1864
Packaging specifications and hFE
Package
Taping
Code
TL TV2
Type
Basic ordering
hFE unit (pieces)
2500
2500
2SD1760
2SD1864
QR
QR
hFE values are classified as follows:
Item
Q
R
hFE 120 to 270 180 to 390
Electrical characteristic curves
10
VCE = 3V
5
2
Ta = 100°C
1 25°C
0.5 25°C
0.2
0.1
0.05
0.02
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
1000
500
Ta = 25°C
200
VCE = 5V
100
50
3V
20
10
5
2
1
0.01 0.02 0.05 0.1 0.2 0.5 1 2
5 10
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs.
collector current( Ι )
10
lC/lB = 10
5
2
1 Ta = 25°C
0.5 VBE (sat)
0.2
25°C
100°C
0.1 Ta = 100°C
0.05
25°C
0.02
VCE (sat)
0.01
0.01 0.02 0.05 0.1 0.2 0.5
25°C
12
5 10
COLLECTOR CURRENT : IC (A)
Fig.7 Collector-emitter saturation
voltage vs. collector current
Base-emitter saturation voltage
vs. collector current
3.0
Ta = 25°C
2.5 45mA
50mA
2.0
1.5
1.0
40mA
35mA
30mA
25mA
20mA
15mA
10mA
5mA
0.5
0 IB = 0mA
0 12345
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics ( Ι )
1000
500
VCE = 3V
200 Ta = 100°C
100
50 25°C
25°C
20
10
5
2
1
0.01 0.02 0.05 0.1 0.2 0.5 1 2
5 10
COLLECTOR CURRENT : IC (A)
Fig.5 DC current gain vs.
collector curren( ΙΙ )
1000
500
Ta = 25°C
VCE = 5V
200
100
50
20
10
5
2
1
1 2 5 10 20 50 100 200 5001000
EMITTER CURRENT : IE (mA)
Fig.8 Gain bandwidth product vs.
emitter current
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
2/3
Data Sheet
3.0 50mA
45mA
40mA
2.5 35mA
30mA
25mA
2.0 20mA
15mA
Ta = 25°C
1.5
10mA
1.0
IB = 5mA
0.5
PC = 15W
0
0 10 20 30 40 50
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded-emitter output
characteristics( ΙΙ )
10
Ta = 25°C
5
2
1
0.5
0.2
IC/IB = 50
0.1
20
0.05 10
0.02
0.01
0.010.02 0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter saturation
voltage vs. collector current
1000
500
200
100
50
Ta = 25°C
f = 1MHz
IE = 0A
20
10
5
2
1
0.1 0.2
0.5 1
2
5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.9 Collector output capacitance
vs. collector-base voltage
2009.12 - Rev.A


Part Number 2SD1760
Description Power Transistor
Maker Rohm
PDF Download

2SD1760 Datasheet PDF






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