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RU1H130S - N-Channel Advanced Power MOSFET

Description

D Applications High Efficiency Synchronous Rectification in SMPS High Speed Power Switching G S TO263 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Te

Features

  • 100V/130A, RDS (ON) =7mΩ(Typ. )@VGS=10V.
  • Super High Dense Cell Design.
  • Ultra Low On-Resistance.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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Datasheet Details

Part number RU1H130S
Manufacturer Ruichips
File Size 308.19 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU1H130S Datasheet
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Full PDF Text Transcription

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RU1H130S N-Channel Advanced Power MOSFET Features •100V/130A, RDS (ON) =7mΩ(Typ.
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