RU1HE3D mosfet equivalent, n-channel advanced power mosfet.
* 100V/3A, RDS (ON) =130mΩ (Typ.) @ VGS=10V RDS (ON) =140mΩ (Typ.) @ VGS=4.5V
* ESD Protected
* Reliable and Rugged
* Ultra Low On-Resistance
* 100% a.
* Power Management
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Ot.
SOT-223
Applications
* Power Management
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG.
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