Datasheet4U Logo Datasheet4U.com

RU1HE3D Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

📥 Download Datasheet

Datasheet Details

Part number RU1HE3D
Manufacturer Ruichips
File Size 249.81 KB
Description N-Channel Advanced Power MOSFET
Download RU1HE3D Download (PDF)

General Description

SOT-223 Applications • Power Management N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TC=25°C ID Continuous Drain Current(VGS=10V) TC=25°C TC=70°C PD ② RθJA Maximum Power Dissipation TC=25°C TC=70°C Thermal Resistance-Junction to Ambient Rating 100 ±20 150 -55 to 150 3 12 ① 3 2.5 2.5 1.6 50 Unit V °C °C A A A W °C/W Copyright© Ruichips Semiconductor Co., Ltd Rev.

D – OCT., 2

Overview

RU1HE3D N-Channel Advanced Power MOSFET MOSFET.

Key Features

  • 100V/3A, RDS (ON) =130mΩ (Typ. ) @ VGS=10V RDS (ON) =140mΩ (Typ. ) @ VGS=4.5V.
  • ESD Protected.
  • Reliable and Rugged.
  • Ultra Low On-Resistance.
  • 100% avalanche tested.
  • Lead Free and Green Available Pin.

More Datasheets from Ruichips

Part Number Description
RU1HE3H N-Channel Advanced Power MOSFET
RU1HE12L N-Channel Advanced Power MOSFET
RU1HE16L N-Channel Advanced Power MOSFET
RU1HE4D N-Channel Advanced Power MOSFET
RU1HE4H N-Channel Advanced Power MOSFET
RU1H100 N-Channel Advanced Power MOSFET
RU1H100R N-Channel Advanced Power MOSFET
RU1H130Q N-Channel Advanced Power MOSFET
RU1H130R N-Channel Advanced Power MOSFET
RU1H130S N-Channel Advanced Power MOSFET