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RU1HE4D Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU1HE4D
Manufacturer Ruichips
File Size 274.45 KB
Description N-Channel Advanced Power MOSFET
Download RU1HE4D Download (PDF)

General Description

SOT-223 Applications • DC-DC Converter • Motor Driving N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RθJA Continuous Drain Current(VGS=10V) Maximum Power Dissipation TA=25°C TA=70°C TA=25°C TA=70°C Thermal Resistance-Junction to Ambient Rating 100 ±20 150 -55 to 150 3 16 ① 4 3.4 2.5 1.6 50 Unit V °C °C A A A W °C/W Copyright Ruichips Semiconductor Co., Ltd Rev.

C – MAR., 2013 www.ruichips.com

Overview

RU1HE4D N-Channel Advanced Power MOSFET.

Key Features

  • 100V/4A, RDS (ON) =72mΩ (Typ. ) @ VGS=10V RDS (ON) =80mΩ (Typ. ) @ VGS=4.5V.
  • ESD Protected.
  • Reliable and Rugged.
  • Ultra Low On-Resistance.
  • Lead Free and Green Available Pin.

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