RU20P18L - P-Channel Advanced Power MOSFET

Description

D G S TO252 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① I

Features

-20V/-18A, RDS (ON) =30mΩ(Typ. )@VGS=-4.5V RDS (ON) =45mΩ(Typ. )@VGS=-2.5V.
Low On-Resistance.
Super High Dense Cell Design.
Fast Switching and Fully Avalanche Rated.
100% avalanche tested.
175°C Operating Temperature.
Lead Free and Green Devices Available (RoHS Compliant).

Ruichips

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Datasheet Details

Part number	RU20P18L
Manufacturer	Ruichips
File Size	322.84 KB
Description	P-Channel Advanced Power MOSFET
Datasheet	RU20P18L Datasheet
Additional preview pages of the RU20P18L datasheet.

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Full PDF Text Transcription

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RU20P18L P-Channel Advanced Power MOSFET Features • -20V/-18A, RDS (ON) =30mΩ(Typ.)@VGS=-4.5V RDS (ON) =45mΩ(Typ.)@VGS=-2.

Published: Apr 25, 2016 |