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RU20P4C6 - P-Channel Advanced Power MOSFET

Description

S D D G D D SOT23-6 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sin

Features

  • -20V/-4A, RDS (ON) =35mΩ(Typ. )@VGS=-4.5V RDS (ON) =45mΩ(Typ. )@VGS=-2.5V.
  • Low On-Resistance.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet Details

Part number RU20P4C6
Manufacturer Ruichips
File Size 380.17 KB
Description P-Channel Advanced Power MOSFET
Datasheet download datasheet RU20P4C6 Datasheet

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Full PDF Text Transcription

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RU20P4C6 P-Channel Advanced Power MOSFET Features • -20V/-4A, RDS (ON) =35mΩ(Typ.)@VGS=-4.5V RDS (ON) =45mΩ(Typ.)@VGS=-2.
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