RU20P4C6 Description
S D D G D D SOT23-6 D G Ratings Symbol Parameter mon Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=-10V) PD Maximum Power Dissipation RJC -Junction to Case RJA③ -Junction to...
RU20P4C6 Key Features
- 20V/-4A, RDS (ON) =35mΩ(Typ.)@VGS=-4.5V RDS (ON) =45mΩ(Typ.)@VGS=-2.5V
- Low On-Resistance
- Super High Dense Cell Design
- Reliable and Rugged
- Lead Free and Green Devices Available (RoHS pliant)