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RU20P5E Datasheet P-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU20P5E
Manufacturer Ruichips
File Size 313.08 KB
Description P-Channel Advanced Power MOSFET
Datasheet download datasheet RU20P5E Datasheet

General Description

SDG Applications • Load Switch • Power Management SOT89 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=-4.5V) PD Maximum Power Dissipation RθJC RθJA③ Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ④ EAS Avalanche Energy, Single Pulsed S P-Channel MOSFET Rating Unit TA=25°C -20 ±12 150 -55 to 150 -1.2 V °C °C A TA=25°C TA=25°C TA=70°C TA=25°C TA=70°C -20 A -5 A -3.9 1.25 W 0.8 10 °C/W 100 °C/W 56 mJ Ruichips Semiconductor Co., Ltd Rev.

C– DEC., 2013 1 www.ruichips.com RU20P5E Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU20P5E Min.

Typ.

Overview

RU20P5E P-Channel Advanced Power MOSFET.

Key Features

  • -20V/-5A, RDS (ON) =50mΩ(Typ. )@VGS=-4.5V RDS (ON) =65mΩ(Typ. )@VGS=-3V.
  • Low On-Resistance.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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