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RU20P2B Datasheet P-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU20P2B
Manufacturer Ruichips
File Size 324.26 KB
Description P-Channel Advanced Power MOSFET
Datasheet download datasheet RU20P2B Datasheet

General Description

D G S SOT23 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=-4.5V) PD Maximum Power Dissipation RθJC RθJA③ Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ④ EAS Avalanche Energy, Single Pulsed S P-Channel MOSFET Rating Unit TA=25°C -20 ±12 150 -55 to 150 -1.25 V °C °C A TA=25°C TA=25°C TA=70°C TA=25°C TA=70°C -9.6 A -2.4 A -1.9 1 W 0.64 - °C/W 125 °C/W TBD mJ Ruichips Semiconductor Co., Ltd Rev.

A– JUL., 2013 1 www.ruichips.com RU20P2B Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU20P2B Min.

Typ.

Overview

RU20P2B P-Channel Advanced Power MOSFET.

Key Features

  • -20V/-2.4A, RDS (ON) =95mΩ(Typ. )@VGS=-4.5V RDS (ON) =140mΩ(Typ. )@VGS=-2.5V.
  • Low On-Resistance.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant).

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