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RU20P4C Datasheet P-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU20P4C
Manufacturer Ruichips
File Size 253.36 KB
Description P-Channel Advanced Power MOSFET
Datasheet download datasheet RU20P4C Datasheet

General Description

SOT-23-3 Applications • Power Management • Load Switch Absolute Maximum Ratings P-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RθJA Continuous Drain Current TA=25°C TA=70°C Maximum Power Dissipation TA=25°C TA=70°C Thermal Resistance-Junction to Ambient Rating -20 ±12 150 -55 to 150 -1.5 ① -16 -4 -3.2 1.3 0.8 100 Unit V °C °C A A A W °C/W Copyright© Ruichips Semiconductor Co., Ltd Rev.

A– JUL., 2011 www.ruichips.com RU20P4C Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU20P4C Unit Min.

Typ.

Overview

RU20P4C P-Channel Advanced Power MOSFET MOSFET.

Key Features

  • -20V/-4A, RDS (ON) =40mΩ (Typ. ) @ VGS=-4.5V RDS (ON) =55mΩ (Typ. ) @ VGS=-2.5V.
  • Low RDS (ON).
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • Lead Free and Green Available Pin.

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