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RU20P3B Datasheet P-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU20P3B
Manufacturer Ruichips
File Size 264.50 KB
Description P-Channel Advanced Power MOSFET
Datasheet download datasheet RU20P3B Datasheet

General Description

SOT-23 Applications • Power Management • Load Switch Absolute Maximum Ratings P-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RθJA Continuous Drain Current(VGS=-4.5V) TA=25°C TA=70°C Maximum Power Dissipation TA=25°C TA=70°C Thermal Resistance-Junction to Ambient Rating -20 ±12 150 -55 to 150 -1.2 ① -12 -3 -2.3 1 0.64 125 Unit V °C °C A A A W °C/W Copyright© Ruichips Semiconductor Co., Ltd Rev.

A– SEP., 2012 www.ruichips.com RU20P3B Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU20P3B Unit Min.

Typ.

Overview

RU20P3B P-Channel Advanced Power MOSFET MOSFET.

Key Features

  • -20V/-3A, RDS (ON) =80mΩ (Typ. ) @ VGS=-4.5V RDS (ON) =110mΩ (Typ. ) @ VGS=-2.5V.
  • Low RDS (ON).
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • Lead Free and Green Available Pin.

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