RU20P18L Datasheet P-Channel Advanced Power MOSFET

Manufacturer: Ruichips

RU20P18L p-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RU20P18L
Manufacturer	Ruichips
File Size	322.84 KB
Description	P-Channel Advanced Power MOSFET
Datasheet	RU20P18L Datasheet

General Description

D G S TO252 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=-10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed S P-Channel MOSFET Rating Unit TC=25°C -20 ±12 175 -55 to 175 -18 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C -72 A -18 A -13 30 W 15 5 °C/W 100 °C/W 56 mJ Ruichips Semiconductor Co., Ltd Rev.

A– MAY., 2013 1 www.ruichips.com RU20P18L Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU20P18L Min.

Typ.

Overview

RU20P18L P-Channel Advanced Power MOSFET.

Key Features

-20V/-18A, RDS (ON) =30mΩ(Typ. )@VGS=-4.5V RDS (ON) =45mΩ(Typ. )@VGS=-2.5V.
Low On-Resistance.
Super High Dense Cell Design.
Fast Switching and Fully Avalanche Rated.
100% avalanche tested.
175°C Operating Temperature.
Lead Free and Green Devices Available (RoHS Compliant).

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