RU20P2B Datasheet PDF (P-Channel Advanced Power MOSFET)

RU20P2B - P-Channel Advanced Power MOSFET

Description

D G S SOT23 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① I

Features

-20V/-2.4A, RDS (ON) =95mΩ(Typ. )@VGS=-4.5V RDS (ON) =140mΩ(Typ. )@VGS=-2.5V.
Low On-Resistance.
Super High Dense Cell Design.
Reliable and Rugged.
Lead Free and Green Devices Available (RoHS Compliant).

Datasheet Details

Part number	RU20P2B
Manufacturer	Ruichips
File Size	324.26 KB
Description	P-Channel Advanced Power MOSFET
Datasheet	RU20P2B Datasheet
Additional preview pages of the RU20P2B datasheet.

📁 Similar Datasheet

RU20A - FAST RECOVERY RECTIFIER DIODE (EIC)

RU20A - Fast-Recovery Rectifier Diodes (Sanken electric)

RU20A - Diode (Galaxy)

RU2 - Fast-Recovery Rectifier Diodes (Sanken electric)

RU2 - Silicon And Fast Recovery Rectifiers (WEJ)

RU2 - FAST RECOVERY RECTIFIER DIODES (EIC)

RU2441B04 - RF Module (Samsung)

RU2441B04GCA - RF Module (Samsung)

RU2441B04UAA - RF Module (Samsung)

RU2441H04 - RF Module (Samsung)

Full PDF Text Transcription

Click to expand full text

RU20P2B P-Channel Advanced Power MOSFET Features • -20V/-2.4A, RDS (ON) =95mΩ(Typ.)@VGS=-4.5V RDS (ON) =140mΩ(Typ.)@VGS=-2.5V • Low On-Resistance • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Load Switch Pin Description D G S SOT23 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=-4.

Published: Apr 25, 2016 |