RU20P4C6 - P-Channel Advanced Power MOSFET

Ruichips

Datasheet Details

Part number	RU20P4C6
Manufacturer	Ruichips
File Size	380.17 KB
Description	P-Channel Advanced Power MOSFET
Datasheet	RU20P4C6 Datasheet

General Description

S D D G D D SOT23-6 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=-10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA③ Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS④ Avalanche Energy, Single Pulsed S P-Channel MOSFET Rating Unit TA=25°C -20 ±10 150

Overview

RU20P4C6 P-Channel Advanced Power MOSFET.

Key Features

-20V/-4A, RDS (ON) =35mΩ(Typ. )@VGS=-4.5V RDS (ON) =45mΩ(Typ. )@VGS=-2.5V.
Low On-Resistance.
Super High Dense Cell Design.
Reliable and Rugged.
Lead Free and Green Devices Available (RoHS Compliant).

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