RU20P5E Datasheet PDF (P-Channel Advanced Power MOSFET)

RU20P5E - P-Channel Advanced Power MOSFET

Description

SDG Applications Load Switch Power Management SOT89 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Dio

Features

-20V/-5A, RDS (ON) =50mΩ(Typ. )@VGS=-4.5V RDS (ON) =65mΩ(Typ. )@VGS=-3V.
Low On-Resistance.
Super High Dense Cell Design.
Reliable and Rugged.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

Datasheet Details

Part number	RU20P5E
Manufacturer	Ruichips
File Size	313.08 KB
Description	P-Channel Advanced Power MOSFET
Datasheet	RU20P5E Datasheet
Additional preview pages of the RU20P5E datasheet.

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Full PDF Text Transcription

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RU20P5E P-Channel Advanced Power MOSFET Features • -20V/-5A, RDS (ON) =50mΩ(Typ.)@VGS=-4.5V RDS (ON) =65mΩ(Typ.)@VGS=-3V • Low On-Resistance • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description SDG Applications • Load Switch • Power Management SOT89 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=-4.

Published: Apr 25, 2016 |