RU55111R - N-Channel Advanced Power MOSFET

Description

TO-220 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on La

Features

55V/110A, RDS (ON) =5mΩ(tpy. )@VGS=10V RDS (ON) =7mΩ(tpy. )@VGS=4.5V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

Ruichips

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Datasheet Details

Part number	RU55111R
Manufacturer	Ruichips
File Size	283.47 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU55111R Datasheet
Additional preview pages of the RU55111R datasheet.

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Full PDF Text Transcription

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RU55111R N-Channel Advanced Power MOSFET MOSFET Features • 55V/110A, RDS (ON) =5mΩ(tpy.)@VGS=10V RDS (ON) =7mΩ(tpy.)@VGS=4.

Published: Apr 26, 2016 |