Datasheet Details
| Part number | RU55200Q |
|---|---|
| Manufacturer | Ruichips |
| File Size | 271.41 KB |
| Description | N-Channel Advanced Power MOSFET |
| Datasheet | RU55200Q-Ruichips.pdf |
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Overview: RU55200Q N-Channel Advanced Power MOSFET.
| Part number | RU55200Q |
|---|---|
| Manufacturer | Ruichips |
| File Size | 271.41 KB |
| Description | N-Channel Advanced Power MOSFET |
| Datasheet | RU55200Q-Ruichips.pdf |
|
|
|
G DS TO247 D G Absolute Maximum Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 55 ±25 175 -55 to 175 200 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 800 A 200 A 142 326 W 163 0.46 °C/W 50 °C/W 625 mJ Ruichips Semiconductor Co., Ltd Rev.
A– JUL., 2013 1 .ruichips.
RU55200Q Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU55200Q Min.
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