Datasheet Details
| Part number | RU55111R |
|---|---|
| Manufacturer | Ruichips |
| File Size | 283.47 KB |
| Description | N-Channel Advanced Power MOSFET |
| Datasheet | RU55111R-Ruichips.pdf |
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Overview: RU55111R N-Channel Advanced Power MOSFET MOSFET.
| Part number | RU55111R |
|---|---|
| Manufacturer | Ruichips |
| File Size | 283.47 KB |
| Description | N-Channel Advanced Power MOSFET |
| Datasheet | RU55111R-Ruichips.pdf |
|
|
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TO-220 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev.
A– MAR., 2012 Rating 55 ±20 175 -55 to 175 ① 110 ② 420 ① 110 ① 88 176 88 0.85 Unit V °C °C A A A W W °C/W 506 mJ .ruichips.
RU55111R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU55111R Unit Min.
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