Datasheet4U Logo Datasheet4U.com

RU55L18R Datasheet P-channel Advanced Power MOSFET

Manufacturer: Ruichips

Overview: RU55L18R P-Channel Advanced Power MOSFET MOSFET.

Datasheet Details

Part number RU55L18R
Manufacturer Ruichips
File Size 316.17 KB
Description P-Channel Advanced Power MOSFET
Datasheet RU55L18R-Ruichips.pdf

General Description

TO-220 P-Channel MOSFET Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=-10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ② EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating -60 ±20 175 -55 to 175 -16 ① -64 -16 -11 54 27 2.8 72 Unit V °C °C A A A W °C/W mJ Copyright© Ruichips Semiconductor Co., Ltd Rev.

A– AUG., 2012 .ruichips.

RU55L18R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU55L18R Unit Min.

Key Features

  • -60V/-16A, RDS (ON) =100mΩ(Typ. )@VGS=-10V RDS (ON) =125mΩ(Typ. )@VGS=-4.5V.
  • Super High Dense Cell Design.
  • ESD protected.
  • Reliable and Rugged.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

RU55L18R Distributor