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RU55L18L Datasheet P-channel Advanced Power MOSFET

Manufacturer: Ruichips

Overview: RU55L18L P-Channel Advanced Power MOSFET MOSFET.

Datasheet Details

Part number RU55L18L
Manufacturer Ruichips
File Size 290.04 KB
Description P-Channel Advanced Power MOSFET
Datasheet RU55L18L-Ruichips.pdf

General Description

TO252 P-Channel MOSFET Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=-10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ② EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating -60 ±20 175 -55 to 175 -16 ① -64 -16 -11 50 25 3 72 Unit V °C °C A A A W °C/W mJ Copyright© Ruichips Semiconductor Co., Ltd Rev.

B– AUG., 2012 .ruichips.

RU55L18L Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU55L18L Unit Min.

Key Features

  • -60V/-16A, RDS (ON) =100mΩ(tpy. )@VGS=-10V RDS (ON) =125mΩ(tpy. )@VGS=-4.5V.
  • Super High Dense Cell Design.
  • ESD protected.
  • Reliable and Rugged.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

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