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RU55110R Datasheet N-channel Advanced Power MOSFET

Manufacturer: Ruichips

Overview: RU55110R N-Channel Advanced Power MOSFET MOSFET.

Datasheet Details

Part number RU55110R
Manufacturer Ruichips
File Size 281.99 KB
Description N-Channel Advanced Power MOSFET
Datasheet RU55110R-Ruichips.pdf

General Description

TO-220 Applications • DC-DC Converters and Off-line UPS N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev.

A– DEC., 2011 Rating 55 ±25 175 -55 to 175 ① 110 ② 420 ① 110 ① 88 176 88 0.85 Unit V °C °C A A A W W °C/W 506 mJ .ruichips.

RU55110R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU55110R Unit Min.

Key Features

  • 55V/110A, RDS (ON) =5mΩ(tpy. )@VGS=10V.
  • Super High Dense Cell Design.
  • Ultra Low On-Resistance.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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