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SEMTECH

2N7000 Datasheet Preview

2N7000 Datasheet

Small Signal MOSFET

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2N7000
Small Signal MOSFET
200 mA, 60 V
N-Channel
Drain
Gate
Source
1. Source 2.Gate 3.Drain
TO-92 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Drain Source Voltage
Drain-Gate Voltage (RGS = 1 M)
Gate-source Voltage
Drain Current
Continuous
Non-repetitive ( tp 50 μs)
Continuous
Pulsed
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VDSS
VDGR
VGS
VGSM
ID
IDM
PD
Tj
Tstg
Value
60
60
± 20
± 40
200
500
350
150
- 55 to + 150
Unit
V
V
V
V
mA
mA
mW
OC
OC
SEMTECH ELECTRONICS LTD.
®
Dated : 16/08/2016 Rev:01




SEMTECH

2N7000 Datasheet Preview

2N7000 Datasheet

Small Signal MOSFET

No Preview Available !

2N7000
Characteristics at Ta = 25 OC
Parameter
Drain-Source Breakdown Voltage
at VGS = 0, ID = 10 μA
Zero Gate Voltage Drain Current
at VDS = 48 V, VGS = 0
Gate-Body Leakage Current
at VGS = ± 15 V, VDS = 0
Gate Threshold Voltage
at VDS = VGS, ID = 1 mA
Static Drain-Source On-Resistance
at VGS = 10 V, ID = 500 mA
at VGS = 4.5 V, ID = 75 mA
Drain-Source On-Voltage
at VGS = 10 V, ID = 500 mA
at VGS = 4.5 V, ID = 75 mA
On-State Drain Current
at VGS = 4.5 V, VDS = 10 V
Forward Transconductance
at VDS = 10 V, ID = 200 mA
Input Capacitance
at VDS = 25 V, VGS = 0, f = 1 MHz
Output Capacitance
at VDS = 25 V, VGS = 0, f = 1 MHz
Reverse Transfer Capacitance
at VDS = 25 V, VGS = 0, f = 1 MHz
Turn-On Delay Time
at VDD = 15 V, ID = 500 mA, RG = 25 , RL = 30 , Vgen =10V
Turn-Off Delay Time
at VDD = 15 V, ID = 500 mA, RG = 25 , RL = 30 , Vgen=10V
Symbol
V(BR)DSS
IDSS
± IGSS
VGS(th)
rDS(on)
VDS(on)
ID(on)
gfs
Ciss
Coss
Crss
ton
toff
Min.
60
-
-
0.8
-
-
-
-
75
100
-
-
-
-
-
Max.
-
1
10
3
5
6
2.5
0.45
-
-
60
25
5
10
10
Unit
V
μA
nA
V
V
mA
mS
pF
pF
pF
ns
ns
SEMTECH ELECTRONICS LTD.
®
Dated : 16/08/2016 Rev:01


Part Number 2N7000
Description Small Signal MOSFET
Maker SEMTECH
Total Page 2 Pages
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