STN2610D Description
STN2610D is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications.
STN2610D Key Features
- 60V/10.0A, RDS(ON) = 10mΩ (Typ.) @VGS = 10V
- 60V/8.0A, RDS(ON) = 12mΩ @VGS = 4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- TO-252, TO-251 package design PART MARKING Y： Year Code A：Process Code B：Process Code STANSON TECHNOLOGY 12