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STP4403 Datasheet Preview

STP4403 Datasheet

P-Channel Enhancement Mode MOSFET

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STP4403
P Channel Enhancement Mode MOSFET
- 10.0A
DESCRIPTION
STP4403 is the P-Channel logic enhancement mode power field effect transistors are
produced using high cell density, DMOS trench technology. This high density process
is especially tailored to minimize on-state resistance. These devices are particularly
suited for low voltage application, such as cellular phone and notebook computer
power management and other battery powered circuits, and low in-line power loss are
needed in a very small outline surface mount package.
PIN CONFIGURATION
SOP-8
FEATURE
-20V/-10.0A, RDS(ON) = 30mΩ
@VGS = -4.5V
-20V/-8.6A, RDS(ON) = 35mΩ
@VGS = -2.5V
-20V/-7.6A, RDS(ON) = 48mΩ
@VGS = -1.8V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and maximum DC
current capability
SOP-8 package design
PART MARKING
SOP-8
Y: Year Code A: Week Code
P: Package Code B: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4403 2010. V1




STANSON

STP4403 Datasheet Preview

STP4403 Datasheet

P-Channel Enhancement Mode MOSFET

No Preview Available !

STP4403
P Channel Enhancement Mode MOSFET
- 10.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25Unless otherwise noted )
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
Continuous Drain Current
(TJ=150)
Pulsed Drain Current
TA=25
TA=70
VGSS
ID
IDM
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25
TA=70
Operation Junction Temperature
IS
PD
TJ
Storgae Temperature Range
TSTG
Thermal Resistance-Junction to Ambient
RθJA
Typical
-20
±12
-10.0
-8.0
-30
-2.3
2.8
1.8
-55/150
-55/150
70
Unit
V
V
A
A
A
W
/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4403 2010. V1


Part Number STP4403
Description P-Channel Enhancement Mode MOSFET
Maker STANSON
Total Page 6 Pages
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