19NM50N datasheet, mosfet equivalent, STMicroelectronics

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19NM50N Features and benefits

Order codes VDS @ TJmax STF19NM50N STP19NM50N 550 V STW19NM50N RDS(on) max 0.25 Ω ID 14 A
* 100% avalanche tested
* Low input capacitance and gate charge
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19NM50N Application

* Switching applications '7$% * 6 Description These devices are N-channel Power MOSFETs developed using.

19NM50N Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and .

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