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BUL416 Datasheet

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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BUL416
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
n STMicroelectronics PREFERRED SALES
TYPE
Figure 1: Package
n NPN TRANSISTOR
n HIGH VOLTAGE CAPABILITY
)n VERY HIGH SWITCHING SPEED
t(sn FULLY CHARACTERISEZ AT 125 oC
cn LOW SPREAD OF DYNAMIC PARAMETERS
rodu )APPLICATIONS
P t(sn ELECTRONIC BALLAST FOR
te cFLUORESCENT LIGHTING
le un SWITCH MODE POWER SUPPLIES
so rodDESCRIPTION
b PThe device is manufactured using high voltage
- O teMulti-Epitaxial Mesa technology for cost-effective
) lehigh performance. It uses a Hollow Emitter
t(s ostructure to enhance switching speeds.
c bsThe BUL series is designed for use in lighting
applications and low cost switch-mode power
du Osupplies.
Pro t(s) -Table 1: Order Codes
te cPart Number
Marking
sole roduBUL416
BUL416A
or (#)
BUL416B
b P# See:note on page 2
O teTable 2: Absolute Maximum Ratings
oleSymbol
bsVCES
O VCEO
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
3
2
1
TO-220
Figure 2: Internal Schematic Diagram
Package
TO-220
Packaging
Tube
Value
1600
800
Unit
V
V
VEBO Emitter-Base Voltage (IC = 0)
9V
IC Collector Current
6A
ICM Collector Peak Current (tp < 5ms)
9A
IB Base Current
5A
IBM Base Peak Current (tp < 5ms)
8A
Ptot Total Dissipation at TC = 25 oC
110 W
Tstg Storage Temperature
-65 to 150
°C
January 2005
Rev. 3
1/8


STMicroelectronics Electronic Components Datasheet

BUL416 Datasheet

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

No Preview Available !

BUL416
Symbol
Parameter
TJ Max. Operating Junction Temperature
Value
150
Unit
°C
Table 3: Thermal Data
Rthj-case Thermal Resistance Junction-Case
Rthj-amb Thermal Resistance Junction-Ambient
Max
Max
1.14
62.5
oC/W
oC/W
Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ.
Max.
Unit
ICES
t(s)ICEO
ducVCEO(sus)*
Collector Cut-off Current VCE = 1600 V
(VBE =0 V)
VCE = 1600 V
Collector Cut-off Current VCE = 800 V
(IB = 0)
Collector-Emitter
Sustaining Voltage
IC = 100 mA
Tj = 125 oC
L = 25 mH
800
100 µA
500 µA
250 µA
V
Pro t(s)VEBO
lete ducVCE(sat)*
bso ProVBE(sat)*
) - O letehFE*
(IB = 0 )
Emitter-Base Voltage IE = 10 mA
(IC = 0 )
Collector-Emitter
Saturation Voltage
IC = 2 A
IC = 4 A
Base-Emitter Saturation IC = 2 A
Voltage
IC = 4 A
DC Current Gain
IC = 10 mA
IB = 0.4 A
IB = 1.33 A
IB = 0.4 A
IB = 1.33 A
VCE = 5 V
9
10
V
1.5 V
3V
1.2 V
1.5 V
roduct(s - ObsoINDUCTIVE LOAD
P t(s)ts Storage Time
te ctf Fall Time
IC = 0.7 A
Group A
Group B
IC = 3 A
VBE(off) = -5 V
Vclamp = 200 V
VCE = 5 V
IB1 = 1 A
RBB = 0 W
L = 200 µH
12 27
25 40
2.3
650
µs
ns
le u(see figure 12)
dINDUCTIVE LOAD
so rots Storage Time
Ob Ptf Fall Time
IC = 3 A
VBE(off) = -5 V
Vclamp = 200 V
IB1 = 1 A
RBB = 0 W
L = 200 µH
3 µs
680 ns
lete Tj = 100 oC
* Pulsed: Pulsed duration = 300 ms, duty cycle 1.5 %.
(see figure 12)
so# Note: Product is pre-selected in DC current gain (Group A and Group B). STMicroelectronics reserves the right to ship either groups ac-
Obcording to production availability. Please contact your nearest STMicrolectronics sales office for delivery datails.
2/8


Part Number BUL416
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Maker STMicroelectronics
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BUL416 Datasheet PDF






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