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STMicroelectronics Electronic Components Datasheet

BUZ10 Datasheet

N - CHANNEL 50V - 0.06W - 23A TO-220 STripFET] MOSFET

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® BUZ10
N - CHANNEL 50V - 0.06- 23A TO-220
STripFETMOSFET
T YPE
VDSS
RDS(o n)
ID
BUZ 10
50 V < 0.07 23 A
s TYPICAL RDS(on) = 0.06
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V DS
V DGR
VGS
ID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
IDM Drain Current (pulsed)
Ptot T otal Dissipat ion at Tc = 25 oC
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
DIN HUMIDITY CATEGORY (DIN 40040)
IEC CLIMAT IC CAT EG ORY (DIN IEC 68-1)
First digit of the datecode being Z or K identifies silicon characterized in this datasheet.
February 2000
Va l u e
50
50
± 20
23
92
75
-65 to 175
175
E
55/ 15 0/ 56
Un it
V
V
V
A
A
W
oC
oC
1/8


STMicroelectronics Electronic Components Datasheet

BUZ10 Datasheet

N - CHANNEL 50V - 0.06W - 23A TO-220 STripFET] MOSFET

No Preview Available !

BUZ10
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
2. 0
62.5
oC/W
oC/W
AVALANCHE CHARACTERISTICS
Symbo l
IAR
EAS
P a ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 30 V)
Valu e
10
150
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rat ing
Drain Current (VGS = 0) VDS = Max Rat ing Tj = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
50
Typ.
Max.
Unit
V
1
10
± 100
µA
µA
nA
ON ()
Symbo l
VGS(th)
RDS(on)
P ar am et e r
Test Conditions
Gat e Threshold Voltage VDS = VGS ID = 1 mA
Static Drain-source On VGS = 10V ID = 14 A
Resistance
Min.
2.1
Typ.
3
0.06
Max.
4
0.07
Unit
V
DYNAMIC
Symbo l
gfs ()
Ciss
Coss
Crss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 25 V ID = 14 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
6
Typ.
11
Max.
Unit
S
900 pF
130 pF
40 pF
SWITCHING
Symbo l
td(on)
tr
td(off)
tf
P ar am et e r
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 30 V
RGS = 4.7
ID = 10 A
VGS = 10 V
Min.
Typ.
20
45
48
10
Max.
Unit
ns
ns
ns
ns
2/8


Part Number BUZ10
Description N - CHANNEL 50V - 0.06W - 23A TO-220 STripFET] MOSFET
Maker STMicroelectronics
Total Page 8 Pages
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