BUZ10 Datasheet | Specifications & PDF Download

Preliminary data BUZ 100SL-4 SIPMOS ® Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type BUZ 10

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® BUZ10 N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET™ MOSFET T YPE BUZ 10 s s s s s V DSS 50 V R DS(o n) < 0.07 Ω ID 23 A TYPICAL RDS(on) = 0.0

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BUZ 100 SL SPP70N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating tempe

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BUZ 102S SIPMOS Power Transistor Features • N channel • Enhancement mode • Avalanche rated Product Summary Drain source voltage Drain-Source on-st

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BUZ 100 S SPP77N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in

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BUZ 102 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Low on-resistance • 175°C operating temperature •

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isc N-Channel Mosfet Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.018Ω(Max) ·Ultra low on-resistance ·Fast Switching ·175℃ o

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BUZ 100 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperat

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isc N-Channel MOSFET Transistor BUZ101 FEATURES ·Drain Current : ID= 29A@ TC=25℃ ·Drain Source Voltage : VDSS= 50V(Min) ·Static Drain-Source On-Resi

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BUZ 101L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Low on-resistance • 175 °C operatin

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Preliminary data BUZ 102SL-4 SIPMOS ® Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type BUZ 10

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BUZ 100L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Ultra low on-resistance • 175 °C op

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isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current –ID=23A@ TC=25℃ ·Static Drain-Source On-Resistance : RDS(on) = 0.07Ω(Max) ·175℃ operating te

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BUZ 10 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 10 VDS 50

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BUZ10A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ10A Voss 50 V ROS(on) 0.12 D 10 17 A • HIGH SPEED SWITCHING • LOW ROS (ON) • EAS

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BUZ 102AL SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Low on-resistance • 175 °C operati

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BUZ 102 S SPP52N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in

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BUZ 104L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Low on-resistance • 175 °C operatin

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BUZ 104 S SPP14N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in

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Preliminary data BUZ 101 S SPP22N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating tempe

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