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DB-499D-470 - RF power amplifier using 1 x START499D NPN RF silicon transistor

General Description

The DB-499D-470 is a NPN silicon RF power amplifier designed for UHF 2-way radio applications Table 1.

This is preliminary information on a new product now in development or undergoing evaluation.

Key Features

  • Excellent thermal stability Frequency: 430 - 470 MHz Supply voltage: 3.6 V Output power: 29 dBm Power gain: 19 dB Efficiency: 52 % BeO free amplifier Mechanical specification: L = 60 mm, W = 30 mm ". W.

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www.DataSheet4U.com DB-499D-470 RF power amplifier using 1 x START499D NPN RF silicon transistor Preliminary Data Features ■ ■ ■ ■ ■ ■ ■ Excellent thermal stability Frequency: 430 - 470 MHz Supply voltage: 3.6 V Output power: 29 dBm Power gain: 19 dB Efficiency: 52 % BeO free amplifier Mechanical specification: L = 60 mm, W = 30 mm ".W Description The DB-499D-470 is a NPN silicon RF power amplifier designed for UHF 2-way radio applications Table 1. Device summary Order codes DB-499D-470 February 2009 Rev 1 1/11 www.st.com 11 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. www.DataSheet4U.com Contents DB-499D-470 Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . .