GB10NC60KD Description
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Internal schematic diagram Table 1. 20 Contents Contents STGx10NC60KD 1 Electrical ratings.
GB10NC60KD Key Features
- Lower on voltage drop (VCE(sat))
- Lower CRES / CIES ratio (no cross-conduction
- Very soft ultra fast recovery antiparallel diode
- Short-circuit withstand time 10µs