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GB10NC60KD - short-circuit rugged IGBT

General Description

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

High frequency motor controls SMPS and PFC in both hard switch and resonant topologies Motor drives TAB 3 1 D2PAK TAB 3 1 D

Key Features

  • Lower on voltage drop (VCE(sat)).
  • Lower CRES / CIES ratio (no cross-conduction susceptibility).
  • Very soft ultra fast recovery antiparallel diode.
  • Short-circuit withstand time 10µs.

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Full PDF Text Transcription for GB10NC60KD (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for GB10NC60KD. For precise diagrams, and layout, please refer to the original PDF.

STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Features ■ Lower on voltage drop (VCE(sat)) ■ Lower CRES / CIES ratio (no cros...

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■ Lower on voltage drop (VCE(sat)) ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode ■ Short-circuit withstand time 10µs Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Applications ■ High frequency motor controls ■ SMPS and PFC in both hard switch and resonant topologies ■ Motor drives TAB 3 1 D2PAK TAB 3 1 DPAK TAB 3 2 1 TO-220FP 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1.

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