M29W002BT Datasheet | STMicroelectronics

M29W002BT M29W002BB 2 Mbit (256Kb x8, Boot Block) Low Voltage Single Supply Flash Memory PRELIMINARY DATA s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME - 10µs by Byte typical 7 MEMORY BLOCKS - 1 Boot Block (Top or Bottom Location) - 2 Parameter and 4 Main Blocks s s s s PROGRAM/ERASE CONTROLLER - Embedded Byte Program algorithm - Embedded Multi-Block/Chip Erase algorithm - Status Register Polling and Toggle Bits - Ready/Busy Output Pin TSOP40 (N) 10 x 20mm s ERASE SUSPEND and RESUME MODES - Read and Program another Block during Erase Suspend Figure 1. Logic Diagram s TEMPORARY BLOCK UNPROTECTION MODE UNLOCK BYPASS PROGRAM MAND - Faster Production/Batch Programming LOW POWER CONSUMPTION - Standby and Automatic Standby A0-A17 W E G RP M29W002BT M29W002BB RB 18 VCC s s 8 DQ0-DQ7 s 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION - Defectivity below 1 ppm/year ELECTRONIC SIGNATURE - Manufacturer Code: 20h - Top Device Code M29W002BT: 40h - Bottom Device Code M29W002BB: C2h s s AI02955 March 2000 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/20 M29W002BT,...