MSC81350M datasheet, transistors equivalent, STMicroelectronics

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Application

. . . . . . REFRACTORY/GOLD METALLIZATION RUGGEDIZED VSWR 20:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE M.

Description

The MSC81350M device is a high power pulsed transistor specifically designed for IFF avionics applications. This device is capable of withstanding a minimum 20:1 load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and .

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