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MSC82010 - RF & MICROWAVE TRANSISTORS

Description

The MSC82010 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system.

This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions.

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MSC82010 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . . EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC ® PACKAGE P OUT = 10 W MIN. WITH 5.2 dB GAIN @ 2.0 GHz .250 2LFL (S010) hermetically sealed ORDER CODE MSC82010 BRANDING 82010 PIN CONNECTION www.DataSheet4U.com DESCRIPTION The MSC82010 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions. The MSC82010 was designed for Class C amplifier applications in the 1.0 - 2.0 GHz frequency range. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1.
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