PD85015-E Key Features
- Excellent thermal stability mon source configuration POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V Plastic package ESD
- Part: PD85015-E
- Manufacturer: STMicroelectronics (official site)
- Size: 271.42 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| PD85025C | RF power transistor |
| PD85035-E | RF POWER transistor |
| PD85035C | RF power transistor |
| PD85035S-E | RF POWER transistor |
| PD85050S | RF power transistor |
PD85015-E Description
The PD85015-E is a mon source N-channel, enhancement-mode, lateral field-effect RF power transistor. It is designed for high gain, broadband, mercial and industrial applications. It operates at 13.6 V in mon source mode at frequencies of up to 1 GHz.