PD85035-E Description
The PD85035-E is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband mercial and industrial applications. It operates at 13.6 V in mon source mode at frequencies of up to 1 GHz.
PD85035-E Key Features
- Excellent thermal stability
- mon source configuration
- POUT = 35 W with 14.9 dB gain @ 870 MHz /
- Plastic package
- ESD protection
- In pliance with the 2002/95/EC1 European