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PD85035C - RF power transistor

General Description

The PD85035C is a common source N-channel, enhancement-mode lateral FieldEffect RF power transistor.

It is designed for high gain, broadband commercial and industrial applications.

It operates at 13.6 V in common source mode at frequencies of up to 1 GHz.

Key Features

  • Excellent thermal stability Common source configuration POUT = 35 W with 14.5 dB gain @ 945 MHz / 13.6 V BeO-free ceramic package ESD protection In compliance with the 2002/95/EC european directive M243 Epoxy sealed.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD85035C www.datasheet4u.com RF power transistor - LdmoST family Preliminary Data Features ■ ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 35 W with 14.5 dB gain @ 945 MHz / 13.6 V BeO-free ceramic package ESD protection In compliance with the 2002/95/EC european directive M243 Epoxy sealed Description The PD85035C is a common source N-channel, enhancement-mode lateral FieldEffect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035C boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology. PD85035C’s superior linearity performance makes it an ideal solution for car mobile radio. Figure 1.