RF2L36075CF2 Datasheet | STMicroelectronics

75 W, 28 V, 3.1 to 3.6 GHz RF power LDMOS transistor 3 2 B2 Pin connection Pin Connection Gate Source (bottom side) Drain Features Order code Frequency POUT Gain Efficiency 3500 MHz 28 V 75 W 12.5 dB 45% - High efficiency and linear gain operations - Integrated ESD protection - Internal input matching for ease of use - Large positive and negative gate-source voltage range for improved class C operation - Excellent thermal stability, low HCI drift - In pliance with the european directive 2002/95/EC Applications - Tele - S-Band radar Description The RF2L36075CF2 is a 75 W internally matched LDMOS transistor...