RF2L36075CF2 - RF power LDMOS transistor

Product Overview

STMicroelectronics

Datasheet Details

Part number	RF2L36075CF2
Manufacturer	STMicroelectronics
File Size	1.35 MB
Description	RF power LDMOS transistor
Datasheet	RF2L36075CF2 Datasheet
Additional preview pages of the RF2L36075CF2 datasheet.

Product details

Description

The RF2L36075CF2 is a 75 W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and S-Band radar applications in the frequency range from 3.1 to 3.6 GHz.

Features

Order code Frequency VDD POUT Gain Efficiency RF2L36075CF2 3500 MHz 28 V 75 W 12.5 dB 45%.
High efficiency and linear gain operations.
Integrated ESD protection.
Internal input matching for ease of use.
Large positive and negative gate-source voltage range for improved class C operation.
Excellent thermal stability, low HCI drift.
In compliance with the european directive 2002/95/EC.

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Published: Mar 14, 2023 |