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RF2L36040CF2 Datasheet RF power LDMOS transistor

Manufacturer: STMicroelectronics

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General Description

The RF2L36040CF2 is a 40 W, 28 V internally matched LDMOS FET, designed for cellular and S-band radar applications at frequencies from 2.7 to 3.6 GHz.

It can be used in class AB, B or C for all typical modulation formats.

DS13235 - Rev 2 - April 2021 For further information contact your local STMicroelectronics sales office.

Overview

RF2L36040CF2 Datasheet 40 W, 28 V, 2.7 to 3.6 GHz RF power LDMOS transistor 2 1 3 A2 Pin connection Pin Connection 1 Gate 2 Drain 3 Source (bottom side) Product status link RF2L36040CF2 Product summary Order code.

Key Features

  • Order code Frequency VDD POUT Gain Efficiency RF2L36040CF2 3600 MHz 28 V 40 W 14 dB 48%.
  • High efficiency and linear gain operations.
  • Integrated ESD protection.
  • Internally matched for ease of use.
  • Large positive and negative gate-source voltage range for improved class C operation.
  • Excellent thermal stability, low HCI drift.
  • In compliance with the european directive 2002/95/EC.

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