STMicroelectronics RF2L36040CF2
The RF2L36040CF2 is a 40 W, 28 V internally matched LDMOS FET, designed for cellular and S-band radar applications at frequencies from 2.7 to 3.6 GHz. It can be used in class AB, B or C for all typical modulation formats.| Part No. | RF2L36040CF2 |
|---|---|
| Datasheet | RF2L36040CF2 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF power LDMOS transistor |
| Buy | Stock & Price |
FEATURES
Order code Frequency VDD POUT Gain Efficiency RF2L36040CF2 3600 MHz 28 V 40 W 14 dB 48%● High efficiency and linear gain operations
● Integrated ESD protection
● Internally matched for ease of use
● Large positive and negative gate-source voltage range for improved class C operation
● Excellent thermal stability, low HCI drift
● In compliance with the european directive 2002/95/EC
APPLICATIONS
● Telecom● S-band radar
DESCRIPTION
DS13235 - Rev 2 - April 2021 For further information contact your local STMicroelectronics sales office. RF2L36040CF2 Electrical ratings 1 Electrical ratings Symbol V(BR)DSS VGS VDD TSTG TJ Table 1. Absolute maximum ratings (TC = 25 °C) Parameter Drain-source voltage Gate-source voltage Maximum operating voltage Storage temperature range Maximum junction temperature Table 2. Thermal data Symbol Parameter RthJC(1) Thermal resistance, junction-to-case 1. TC = 85 °C, TJ=200 °C, DC test. Symbol HBM CDM Table 3. ESD protection Test methodology Human body...
