RF2L36075CF2 - RF power LDMOS transistor

Datasheet Summary

Description

The RF2L36075CF2 is a 75 W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and S-Band radar applications in the frequency range from 3.1 to 3.6 GHz.

It can be used in class AB, B or C for all typical cellular base station modulation formats.

Features

Order code Frequency VDD POUT Gain Efficiency RF2L36075CF2 3500 MHz 28 V 75 W 12.5 dB 45%.
High efficiency and linear gain operations.
Integrated ESD protection.
Internal input matching for ease of use.
Large positive and negative gate-source voltage range for improved class C operation.
Excellent thermal stability, low HCI drift.
In compliance with the european directive 2002/95/EC.

STMicroelectronics

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Datasheet Details

Part number	RF2L36075CF2
Manufacturer	STMicroelectronics
File Size	1.35 MB
Description	RF power LDMOS transistor
Datasheet	RF2L36075CF2 Datasheet
Additional preview pages of the RF2L36075CF2 datasheet.

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Full PDF Text Transcription

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RF2L36075CF2 Datasheet 75 W, 28 V, 3.1 to 3.6 GHz RF power LDMOS transistor 1 3 2 B2 Pin connection Pin Connection 1 Gate 2 Source (bottom side) 3 Drain Features Order code Frequency VDD POUT Gain Efficiency RF2L36075CF2 3500 MHz 28 V 75 W 12.

Published: Mar 14, 2023 |