STMicroelectronics RF2L36075CF2
The RF2L36075CF2 is a 75 W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and S-Band radar applications in the frequency range from 3.1 to 3.6 GHz. It can be used in class AB, B or C for all typical cellular base station modulation formats.| Part No. | RF2L36075CF2 |
|---|---|
| Datasheet | RF2L36075CF2 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF power LDMOS transistor |
| Buy | Stock & Price |
FEATURES
Order code Frequency VDD POUT Gain Efficiency RF2L36075CF2 3500 MHz 28 V 75 W 12.5 dB 45%● High efficiency and linear gain operations
● Integrated ESD protection
● Internal input matching for ease of use
● Large positive and negative gate-source voltage range for improved class C operation
● Excellent thermal stability, low HCI drift
● In compliance with the european directive 2002/95/EC
APPLICATIONS
● Telecom● S-Band radar
DESCRIPTION
Product status link RF2L36075CF2 Product summary Order code RF2L36075CF2 Marking 2L36075 Package B2 Packing Tape and reel 13" Base / Bulk qty 120/120 DS13249 - Rev 2 - April 2021 For further information contact your local STMicroelectronics sales office. RF2L36075CF2 Electrical ratings 1 Electrical ratings Symbol V(BR)DSS VGS VDD TSTG TJ Table 1. Absolute maximum ratings (TC = 25 °C) Parameter Drain-source voltage Gate-source voltage Maximum operating voltage Storage temperature range Maximum junction temperature Table 2. Thermal data Symbol Parameter RthJC(1) Thermal resistance, junction-to-case 1.
