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RF2L36075CF2 Datasheet RF power LDMOS transistor

Manufacturer: STMicroelectronics

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General Description

The RF2L36075CF2 is a 75 W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and S-Band radar applications in the frequency range from 3.1 to 3.6 GHz.

It can be used in class AB, B or C for all typical cellular base station modulation formats.

Product status link RF2L36075CF2 Product summary Order code RF2L36075CF2 Marking 2L36075 Package B2 Packing Tape and reel 13" Base / Bulk qty 120/120 DS13249 - Rev 2 - April 2021 For further information contact your local STMicroelectronics sales office.

Overview

RF2L36075CF2 Datasheet 75 W, 28 V, 3.1 to 3.6 GHz RF power LDMOS transistor 1 3 2 B2 Pin connection Pin Connection 1 Gate 2 Source (bottom side) 3.

Key Features

  • Order code Frequency VDD POUT Gain Efficiency RF2L36075CF2 3500 MHz 28 V 75 W 12.5 dB 45%.
  • High efficiency and linear gain operations.
  • Integrated ESD protection.
  • Internal input matching for ease of use.
  • Large positive and negative gate-source voltage range for improved class C operation.
  • Excellent thermal stability, low HCI drift.
  • In compliance with the european directive 2002/95/EC.

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