RF2L42008CG2 - RF power LDMOS transistor

Product Overview

STMicroelectronics

Datasheet Details

Part number	RF2L42008CG2
Manufacturer	STMicroelectronics
File Size	1.53 MB
Description	RF power LDMOS transistor
Datasheet	RF2L42008CG2 Datasheet
Additional preview pages of the RF2L42008CG2 datasheet.

Product details

Description

The RF2L42008CG2 is a 8 W, 28 V, internally matched LDMOS FET, designed for global positioning system, wideband communications and ISM applications in the frequency range from 0.7 to 4.2 GHz.

Features

Order code Frequency VDD POUT Gain Efficiency RF2L42008CG2 3600 MHz 28 V 8W 14.5 dB 47%.
High efficiency and linear gain operations.
Integrated ESD protection.
Internally matched for ease of use.
Large positive and negative gate-source voltage range for improved class C operation.
Excellent thermal stability, low HCI drift.
In compliance with the European directive 2002/95/EC.

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Published: Mar 14, 2023 |