RF2L42008CG2 Datasheet | STMicroelectronics

8 W, 28 V, 0.7 to 4.2 GHz RF power LDMOS transistor 3 2 E2 Pin connection Pin Connection Drain Source (bottom side) Gate Features Order code Frequency POUT Gain Efficiency 3600 MHz 28 V 8W 14.5 dB 47% - High efficiency and linear gain operations - Integrated ESD protection - Internally matched for ease of use - Large positive and negative gate-source voltage range for improved class C operation - Excellent thermal stability, low HCI drift - In pliance with the European directive 2002/95/EC Applications - Tele and wideband munications - Avionics and radar - 2.45 GHz industrial Description...