automotive-grade silicon carbide power mosfet.
Order code SCT060W75G3AG
VDS 750 V
RDS(on) typ. 60 mΩ
ID 30 A
HiP247
3 2
1
D(2, TAB)
* AEC-Q101 qualified
*
Very low RDS(on) over the entire temperature.
* DC/DC converter for EV/HEV
* Main inverter (electric traction)
* On board charger (OBC)
AM01475v1_noZen
.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very hig.
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