SCTW100N120G2AG
SCTW100N120G2AG is Automotive-grade silicon carbide Power MOSFET manufactured by STMicroelectronics.
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mΩ (typ., TJ=25 °C), in an HiP247 package
Features
Order code SCTW100N120G2AG
VDS 1200 V
RDS(on)typ. 30 mΩ
ID 75 A
HiP247
D(2, TAB)
G(1) S(3)
3 2 1
- AEC-Q101 qualified
- High speed switching performance
- Very fast and robust intrinsic body diode
- Low capacitances
- Very high operating junction temperature capability (TJ = 200 °C)
Applications
- Traction for inverters
- DC-DC converters
- Solar inverters
- OBC
AM01475v1_noZen
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device Features...
