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SCTW35N65G2V Datasheet Silicon Carbide Power MOSFET

Manufacturer: STMicroelectronics

Overview: SCTW35N65G2V Datasheet Silicon carbide Power MOSFET 650 V, 55 mΩ typ.

General Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

The device

Key Features

  • Order code VDS RDS(on) max. ID SCTW35N65G2V 650 V 67 mΩ 45 A.
  • Very fast and robust intrinsic body diode.
  • Extremely low gate charge and input capacitance.
  • Very high operating junction temperature capability (TJ = 200°C).

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SCTW35N65G2V Distributor