SCTW35N65G2VAG Datasheet | STMicroelectronics

Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package Features Order code SCTW35N65G2VAG VDS 650 V RDS(on) typ. 55 mΩ ID 45 A HiP247 D(2, TAB) G(1) S(3) 3 2 1 - AEC-Q101 qualified - Very fast and robust intrinsic body diode - Low capacitance Applications - Switching mode power supply - EV chargers - DC-DC converters AM01475v1_noZen Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device Features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss...