SCTW35N65G2VAG Datasheet Automotive-grade Silicon Carbide Power MOSFET

Manufacturer: STMicroelectronics

Overview: SCTW35N65G2VAG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ.

Datasheet Details

Part number	SCTW35N65G2VAG
Manufacturer	STMicroelectronics
File Size	201.38 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCTW35N65G2VAG-STMicroelectronics.pdf

General Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

The device

Key Features

Order code SCTW35N65G2VAG VDS 650 V RDS(on) typ. 55 mΩ ID 45 A HiP247 D(2, TAB) G(1) S(3) 3 2 1.
AEC-Q101 qualified.
Very fast and robust intrinsic body diode.
Low capacitance.

SCTW35N65G2VAG Distributor & Price

Compare SCTW35N65G2VAG distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

More Datasheets from STMicroelectronics

Part Number	Description
SCTW35N65G2V	Silicon carbide Power MOSFET
SCTW100N120G2AG	Automotive-grade silicon carbide Power MOSFET
SCTW100N65G2AG	silicon carbide Power MOSFET
SCTW40N120G2V	Silicon carbide Power MOSFET
SCTW40N120G2VAG	Automotive-grade silicon carbide Power MOSFET
SCTW60N120G2	Silicon carbide Power MOSFET
SCTW60N120G2AG	Automotive-grade silicon carbide Power MOSFET
SCTW90N65G2V	Silicon carbide Power MOSFET
SCTWA35N65G2V4AG	Automotive-grade silicon carbide Power MOSFET
SCTWA35N65G2VAG	Automotive-grade silicon carbide Power MOSFET