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SCTW40N120G2V - Silicon carbide Power MOSFET

Product Overview

STMicroelectronics

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SCTW40N120G2V Silicon carbide Power MOSFET by STMicroelectronics - Datasheet Preview — Datasheet preview – SCTW40N120G2V

Datasheet Details

Part number	SCTW40N120G2V
Manufacturer	STMicroelectronics
File Size	199.05 KB
Description	Silicon carbide Power MOSFET
Datasheet	SCTW40N120G2V Datasheet
Additional preview pages of the SCTW40N120G2V datasheet.

Product details

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

Order code VDS RDS(on)max. ID SCTW40N120G2V 1200 V 100 mΩ 36 A.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Very high operating junction temperature capability (TJ = 200 °C).

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Published: Jun 26, 2023 |