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SCTW60N120G2 - Silicon carbide Power MOSFET

Product Overview

STMicroelectronics

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SCTW60N120G2 Silicon carbide Power MOSFET by STMicroelectronics - Datasheet Preview — Datasheet preview – SCTW60N120G2

Datasheet Details

Part number	SCTW60N120G2
Manufacturer	STMicroelectronics
File Size	196.37 KB
Description	Silicon carbide Power MOSFET
Datasheet	SCTW60N120G2 Datasheet
Additional preview pages of the SCTW60N120G2 datasheet.

Product details

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

Order code VDS RDS(on) max. ID SCTW60N120G2 1200 V 52 mΩ 60 A.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Very high operating junction temperature capability (TJ = 200 °C).

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Published: Jun 26, 2023 |