• Part: SCTW60N120G2
  • Description: Silicon carbide Power MOSFET
  • Manufacturer: STMicroelectronics
  • Size: 196.37 KB
Download SCTW60N120G2 Datasheet PDF
SCTW60N120G2 datasheet preview
SCTW60N120G2 page 2
Page 2
SCTW60N120G2 page 3
Page 3

SCTW60N120G2 Key Features

  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitance
  • Very high operating junction temperature capability (TJ = 200 °C)

Related STMicroelectronics Datasheets

Part Number Description
SCTW60N120G2AG Automotive-grade silicon carbide Power MOSFET
SCTW100N120G2AG Automotive-grade silicon carbide Power MOSFET
SCTW100N65G2AG silicon carbide Power MOSFET
SCTW35N65G2V Silicon carbide Power MOSFET
SCTW35N65G2VAG Automotive-grade silicon carbide Power MOSFET