SCTWA40N120G2AG Datasheet Automotive-grade Silicon Carbide Power MOSFET

Manufacturer: STMicroelectronics

Overview: SCTWA40N120G2AG Datasheet Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ.

Datasheet Details

Part number	SCTWA40N120G2AG
Manufacturer	STMicroelectronics
File Size	252.97 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCTWA40N120G2AG-STMicroelectronics.pdf

General Description

S(3) This silicon carbide Power MOSFET device has been developed using ST’s AM01475v1_noZen advanced and innovative 2nd generation SiC MOSFET technology.

The device

Key Features

Order code SCTWA40N120G2AG VDS 1200 V RDS(on) max. 105 mΩ ID 33 A HiP247 long leads D(2, TAB) G(1).
AEC-Q101 qualified.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Very high operating junction temperature capability (TJ = 200 °C).

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